Product Summary

The MG1206B-SBLW is a GTR module, which is a silicon N-channel IGBT. The applications of the MG1206B-SBLW include high power switching applications, motor control applications.

Parametrics

MG1206B-SBLW absolute maximum ratings: (1)Collector.Emitter Voltage: 1700 V; (2)Gate.Emitter Voltage: 20 V; (3)Collector Current: 2400 A; (4)Forward Current: 2400 A; (5)Collector Power Dissipation (Tc = 25℃): 5560 W; (6)Junction Temperature: -20~125 ℃; (7)Storage Temperature Range: -40~125 ℃; (8)Isolation Voltage: 5400 (AC 1min) V; (9)Screw Torque: 4 N·m.

Features

MG1206B-SBLW features: (1)High Input Impedance; (2)Enhancement Mode; (3)Electrodes are isolated from case.

Diagrams

MG1206B-SBLW block diagram

MG1200
MG1200

Other


Data Sheet

Negotiable 
MG1200E
MG1200E

Other


Data Sheet

Negotiable 
MG1200FXF1US51
MG1200FXF1US51

Other


Data Sheet

Negotiable 
MG1200V1US51
MG1200V1US51

Other


Data Sheet

Negotiable 
MG1231A
MG1231A

Other


Data Sheet

Negotiable 
MG1231C
MG1231C

Other


Data Sheet

Negotiable