S29GL512P11TFI01

3.0 v-only page mode flash memory, 200 mA, 3.6 V, 110 ns, TSOP

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Price:: US $5.19~5.50 / piece [Get Latest Price]

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PartNumber:: S29GL512P11TFI01

Brand:: SPANSION - spansion | Pack: TSOP | D/C: 11+

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Products Upload time: 2012-08-10

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Part Number:S29GL512P11TFI01
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Product Summary

The S29GL512P11TFI010 is a 3.0 v-only page mode flash memory featuring 90 nm MirrorBit process technology. The S29GL512P11TFI01 offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. The S29GL512P11TFI010 features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard algorithms. This makes the S29GL512P11TFI01 ideal for todays embedded applications that require higher density, better performance and lower power consumption.

Parametrics

S29GL512P11TFI010 absolute maximum ratings: (1)Storage Temperature, Plastic Packages: –65 to +150℃; (2)Ambient Temperature with Power Applied: –65 to +125℃; (3)Voltage with Respect to Ground: All Inputs and I/Os except as noted below, –0.5 V to VCC + 0.5 V; VCC (Note 1), 0.5 V to +4.0 V; VIO, –0.5V to +4.0V; A9 and ACC (Note 2), 0.5 V to +12.5 V; (4)Output Short Circuit Current : 200 mA.

Features

S29GL512P11TFI010 features: (1)Single 3V read/program/erase (2.7-3.6 V); (2)Enhanced VersatileI/OTM control; (3)90 nm MirrorBit process technology; (4)8-word/16-byte page read buffer; (5)32-word/64-byte write buffer reduces overall programming; (6)time for multiple-word updates; (7)Secured Silicon Sector region; (8)Uniform 64Kword/128KByte Sector Architecture; (9)100,000 erase cycles per sector typical; (10)20-year data retention typical; (11)Offered Packages: 56-pin TSOP, 64-ball Fortified BGA; (12)Suspend and Resume commands for Program and Erase operations; (13)Unlock Bypass Program command to reduce programming; (14)Support for CFI (Common Flash Interface).