Product Summary
The MX25L512MC-12G is a CMOS 524,288 bit serial Flash memory, which is configured as 65,536 x 8 internally. The MX25L512MC-12G features a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). SPI access to the device is enabled by CS# input. The MX25L512MC-12G provide sequential read operation on whole chip. After program/erase command is issued, auto program/ erase algorithms which program/ erase and verify the specified page or sector/block locations will be executed. Program command is executed on page (256 bytes) basis, and erase command is executes on chip or sector (4K-bytes).
Parametrics
MX25L512MC-12G absolute maximum ratings: (1)Ambient Operating Temperature Industrial grade: -40℃ to 85℃; (2)Ambient Operating Temperature Commercial grade: 0℃ to 70℃; (3)Ambient Operating Temperature Storage Temperature: -55℃ to 125℃; (4)Applied Input Voltage: -0.5V to 4.6V; (5)Applied Output Voltage: -0.5V to 4.6V; (6)VCC to Ground Potential: -0.5V to 4.6V; (7)ILI Input Load Current: ± 2 uA; (8)ILO Output Leakage Current: ± 2 uA; (9)ISB1 VCC Standby Current: 10 uA; (10)ISB2 Deep Power-down Current: 5 uA; (11)tVSL VCC(min)to CS# low: 10 us.
Features
MX25L512MC-12G features: (1)Serial Peripheral Interface (SPI)compatible -Mode 0 and Mode 3; (2)524,288 x 1 bit structure; (3)16 Equal Sectors with 4K byte each: Any Sector can be erased individually; (4)Single Power Supply Operation: 2.7 to 3.6 volt for read, erase, and program operations; (5)Latch-up protected to 100mA from -1V to Vcc +1V; (6)Low active read current: 12mA(max.)at 85MHz, 8mA(max.)at 66MHz and 4mA(max.)at 33MHz; (7)Low active programming current: 15mA (max.); (8)Low active erase current: 15mA (max.); (9)Low standby current: 10uA (max.)Deep power-down mode 1uA (typical).
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