(China (Mainland))
Product Summary
The MRF7S21170HS is a RF Power Field Effect Transistor. Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cel lular radio and WLL applications.
Parametrics
MRF7S21170HS absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -0.5 to +65 Vdc; (2)Gate-Source Voltage, VGS: -6.0 to +10 Vdc; (3)Operating Voltage, VDD: -32 to +0 Vdc; (4)Storage Temperature Range, Tstg: -65 to +150℃; (5)Case Operating Temperature, TC: 150℃; (6)Operating Junction Temperature, TJ: 200℃.
Features
MRF7S21170HS features: (1)100% PAR Tested for Guaranteed Output Power Capability; (2)Characterized with Series Equivalent Large-Signal Impedance Parameters; (3)?Internally Matched for Ease of Use; (4)Integrated ESD Protection; (5)Greater Negative Gate-Source Voltage Range for Improved Class C; (6)Operation; (7)Designed for Digital Predistortion Error Correction Systems; (8)RoHS Compliant; (9)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 MRF7S21170HS |
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IC MOSFET RF N-CHAN NI-880S |
Data Sheet |
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MRF7S21170HSR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power 2.1GHZ HV7 WCDMA NI880HS |
Data Sheet |
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MRF7S21170HSR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power 2.1GHZ HV7 WCDMA NI880HS |
Data Sheet |
Negotiable |
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