Product Summary

The MG1206B-SBLW is a GTR module, which is a silicon N-channel IGBT. The applications of the MG1206B-SBLW include high power switching applications, motor control applications.

Parametrics

MG1206B-SBLW absolute maximum ratings: (1)Collector.Emitter Voltage: 1700 V; (2)Gate.Emitter Voltage: 20 V; (3)Collector Current: 2400 A; (4)Forward Current: 2400 A; (5)Collector Power Dissipation (Tc = 25℃): 5560 W; (6)Junction Temperature: -20~125 ℃; (7)Storage Temperature Range: -40~125 ℃; (8)Isolation Voltage: 5400 (AC 1min) V; (9)Screw Torque: 4 N·m.

Features

MG1206B-SBLW features: (1)High Input Impedance; (2)Enhancement Mode; (3)Electrodes are isolated from case.

Diagrams

MG1206B-SBLW block diagram

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MG1200V1US51

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