(China (Mainland))
Product Summary
The GM2321-LF is a P-Channel Enhancement-Mode MOSFET.
Parametrics
GM2321-LF absolute maximum ratings: (1)Drain-Source Voltage, BVDSS: -20 V; (2)Gate- Source Voltage, VGS: +10 V; (3)Drain Current (continuous), ID: -2.8 A; (4)Drain Current (pulsed), IDM: -10 A; (5)Total Device Dissipation, TA=25℃, PD: 550 mW; (6)Junction, TJ: 150 ℃; (7)Storage Temperature, Tstg: -55 to +150℃.
Features
GM2321-LF features: (1)Drain-Source Breakdown Voltage, (ID = -250uA,VGS=0V), BVDSS: -20V; (2)Gate Threshold Voltage, (ID = -250uA,VGS= VDS), VGS(th): -0.5 to -1.5 V; (3)Diode Forward Voltage Drop, (IS= -0.75A,VGS=0V) VSD: -1.5 V; (4)Zero Gate Voltage Drain Current, (VGS=0V, VDS= -16V) (VGS=0V, VDS= -16V, TA=55℃), IDSS: -1 to -10uA; (5)Gate Body Leakage, (VGS=+10V, VDS=0V), IGSS: +100 nA; (6)Static Drain-Source On-State Resistance, (ID= -2.8A,VGS= -4.5V) RDS(ON): 100 mΩ; (7)Static Drain-Source On-State Resistance, (ID= -2A,VGS= -2.5V) RDS(ON): 120 mΩ; (8)Input Capacitance, (VGS=0V, VDS= -10V,f=1MHz), CISS: 600pF; (9)Output Capacitance, (VGS=0V, VDS= -10V,f=1MHz), COSS: 120pF; (10)Turn-ON Time (VDS= -10V, ID= -2.8A, RGEN=6Ω), t(on): 8ns; (11)Turn-OFF Time, (VDS= -10V, ID= -2.8A, RGEN=6Ω), t(off): 60ns.
Diagrams
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 GM23C4000A |
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Data Sheet |
Negotiable |
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