Product Summary

The BSM100GB120DLC is an IGBT-module.

Parametrics

BSM100GB120DLC absolute maximum ratings: (1)collector-emitter voltage: 1200V; (2)DC-collector current: TC=25℃, 200A; (3)repetitive peak collector current: tP = 1 ms, TC = 80℃, 200A; (4)total power dissipation: 0,78 kW; (5)gate-emitter peak voltage: ±20V; (6)DC forward current: 100A; (7)repetitive peak forw. current: 200A; (8)insulation test voltage: 2,5 kV.

Features

BSM100GB120DLC specifications: (1)collector-emitter saturation voltage, IC = 100A, VGE = 15V, Tvj; (2) = 125℃: 2, 4V; (3)gate threshold voltage: 4,5 min, 5,5 typ, 6,5 max. V; (4)gate charge: 1,1 μC; (5)input capacitance: 6, 5 nF; (6)collector-emitter cut-off current: 0,5mA; (7)gate-emitter leakage current: 400nA.

Diagrams

BSM100GB120DLC pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM100GB120DLC
BSM100GB120DLC

Infineon Technologies

IGBT Modules 1200V 100A DUAL

Data Sheet

0-6: $78.93
6-10: $71.03
BSM100GB120DLCK
BSM100GB120DLCK

Infineon Technologies

IGBT Modules 1200V 100A DUAL

Data Sheet

0-1: $49.93
1-5: $47.43
5-10: $44.93
10-50: $43.44